unisonic technologies co., ltd 2sa1300 pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 2 copyright ? 2011 unisonic technologies co., ltd qw-r208-012.ba silicon pnp epitaxal type ? description * strobo flash applications. * medium power amplifier applications. ? features * high dc current gain and excellent h fe linearity. * h fe(1) =140-600, (v ce = -1v,i c = -0.5a) * h fe(2) =60(min.),120(typ.),(v ce = -1v,i c = -4a) * low saturation voltage * v ce (sat) = -0.5v(max.), (i c = -2a,i e = -50ma) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sa1300l-xx-ab3-r 2sa1300g-xx-ab3-r sot-89 b c e tape reel 2sa1300l-xx-t92-b 2SA1300G-XX-T92-B to-92 e c b tape box 2sa1300l-xx-t92-k 2sa1300g-xx-t92-k to-92 e c b bulk 2sa1300l-xx-t92-r 2sa1300g-xx-t92-r to-92 e c b tape reel note: pin assignment: e: emit ter c: collector b: base
2sa1300 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r208-012.ba ? absolute maximum rating (t a =25 ) parameter symbol ratings unit collector-base voltage v cbo -20 v collector-emitter voltage v ces -20 v v ceo -10 emitter-base voltage v ebo -6 v collector current dc i c -2 a pulsed (note 1) i cp -5 base current i b -2 a collector power dissipation p c 750 mw junction temperature t j 150 storage temperature t stg -40 ~ +150 note 1. pulse width= 10ms(max.), duty cycle=30%(max.) 2. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 3. the device is guaranteed to meet performance specification within 0 ~70 operating temperature range and assured by design from ?20 ~85 . ? electrical characteristics (t a =25 ) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 -10 v emitter-collector breakdown voltage v (br)ebo i e = -1ma, i c =0 -6 v collector cut-off current i cbo v ce = -20v, i e =0 -100 na emitter cut-off current i ebo v be = -6v, i c =0 -100 na dc current gain h fe1 v ce = -1v, i c =0.5a 140 600 h fe2 v ce = -1v, i c = -4a 60 120 collector-emitter sa turation voltage v ce(sat) i c = -2a, i b = -50ma -0.2 -0.5 v base-emitter voltage v be v ce = -1v, i c = -2a -0.83 -1.5 v current gain bandwidth product f t v ce = -1v,i c = -0.5a 140 mhz output capacitance c ob v ce = -10v, i e =0, f=1mhz 50 pf ? classifications of h fe1 rank y gr bl range 140-280 200-400 300-600 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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